CCOG for MT 103 archive revision 201403
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- Effective Term:
- Summer 2014 through Fall 2023
- Course Number:
- MT 103
- Course Title:
- Introduction to Micro and Nano Processing
- Credit Hours:
- Lecture Hours:
- Lecture/Lab Hours:
- Lab Hours:
Addendum to Course Description
This is the third course in a three course set: MT 101, MT 102, and MT 103. The set is required for graduation with the Certificate of Completion or the AAS degree in Microelectronics Technology.
Traces semiconductor processing from blank silicon wafer to finished/packaged integrated circuit. Includes the following manufacturing processes:, oxidation, photolithography, etch, deposition, doping, planarization, and packaging.
This course may be offered in an on-campus format or in a distance learning format on the world-wide-web.
Intended Outcomes for the course
- Describe basic construction sequences of micro and nano electronic devices, and the processes used in their manufacture, with industry professionals.
- Use understanding of emerging uses and opportunities with MEMS and Nanotechnology in everyday life.
- Use developed abilities and habits in the information methods of the industry to communicate and find information on: business news, processes, advances, technical data, etc
Course Activities and Design
Course activities will include a variety of learning activities, such as: instructor delivered lectures, demonstrations, and/or student discussions stressing key topics in the course. In preparation for the lecture portion of the course, students will be expected to complete all reading and problem/question homework assignments.
Outcome Assessment Strategies
Assessment of student performance in this course will consist of written examinations. Assessment may also include oral presentations, written reports, and other class projects.
Course Content (Themes, Concepts, Issues and Skills)
1. Microelectronics Technology
1.3. Describe the working environment in the industry
5. Overview of Wafer Fabrication
5.3. Describe the sequential processes (i.e. the process flow) used in manufacturing a MOS transistor.
5.4. Define the terms: layering, patterning, and doping.
5.7. Describe the purpose of packaging, the different options, and the economics.
6.1. Write the chemical reaction used to produce silicon dioxide in the semiconductor manufacturing process.
6.2. Describe the mechanism of thermal oxidation.
6.3. List three principal uses of silicon dioxide layers in semiconductor devices: (1) surface passivation, (2) surface dielectric, and (3) device dielectric.
6.4. Describe the basic equipment layout and components used for oxidation
7.1. Define photolithography in the context of semiconductor manufacturing.
7.2. Define the terms: negative photoresist and positive photoresist.
7.3. Explain the difference between light field and dark field masks (reticles).
7.4. Construct a flow diagram (about ten steps) that represents the photolithography process. Give reasons for each step and show a cross-sectional view of the wafer at each step.
7.5. Describe the basic equipment layout and components used for photolithography
8.1. Define etch and explain its use in semiconductor manufacturing.
8.2. Explain what is meant by anisotropic etch and isotropic etch.
8.3. Describe the plasma etching process.
8.4. Compare and contrast wet etch with dry etch.
8.5. Describe processes used to remove the photoresist layer.
8.6. Describe the basic equipment layout and components used for etching
9.1. Name the chemical elements used for doping n-type and p-type semiconductor materials.
9.2. Describe the process of diffusion. List two major conditions that are necessary for diffusion to take place.
9.3. Explain the drive-in process and its purpose in diffusion.
9.4. List the key limits of diffusion in the doping of semiconductors and show how these limits are overcome by ion implanting.
9.5. List the key subsystems of an ion implanter.
9.6. Explain what is meant by projected range and concentration profile with relevance to ion implanting.
9.7. Describe the basic equipment layout and components of a rapid thermal processor
10. Chemical Vapor Deposition
10.1. List at least five desirable attributes of deposited films and describe why are they important in the manufacture of semiconductor devices.
10.2. Name the main parts of a CVD system. Use sketches as necessary.
10.3. Explain the basic principles of CVD and discuss the related chemical considerations.
10.4. Give the major similarities and differences in methods, deposited films, and equipment for APCVD, LPCVD, and PECVD systems.
10.5. Give a brief overview of processes, including chemistry and equipment, used to provide polysilicon semiconductor layers, insulators (dielectrics), and conductors in microelectronic devices.
11.1. Define metallization in semiconductor manufacturing and give examples of functions provided by metal films.
11.2. List desirable properties of metals used as surface conductors on an integrated circuit.
11.3. List some key metals and alloys used in the metallization processes in semiconductor manufacturing.
11.4. Describe the sputter deposition or physical vapor deposition process.
11.5. Describe the electroplating process.
12. Test, Sort, and Packaging
12.4. List the four functions of a semiconductor package.
12.5. Recognize and identify the major package designs, e.g. Dual-in-Line, Quad, and Pin Grid Array