CCOG for EET 221 Winter 2022
- Course Number:
- EET 221
- Course Title:
- Semiconductor Devices and Circuits
- Credit Hours:
- Lecture Hours:
- Lecture/Lab Hours:
- Lab Hours:
Addendum to Course Description
In addition to introducing the basic theoretical principles of operation of diodes and transistors, the operational characteristics of the devices will be studied, and measured using curve tracers, simulation, and computer data acquisition methods. This term emphasizes diode and transistor biasing circuits, and basic transistor amplifier circuits.
Intended Outcomes for the course
1. Apply concepts of semiconductor devices to design and analyze circuits.
2. Apply fundamentals of semiconductor devices in electronics projects and use computer tools in circuit design, evaluation and analysis.
Outcome Assessment Strategies
Assessment methods are to be determined by the instructor. Typically, in class exams and quizzes, and homework assignments will be used. Lab work is typically assessed by a lab notebook, formal lab reports, performance of experiments, and possibly a lab exam
Course Content (Themes, Concepts, Issues and Skills)
1. Semiconductor materials, PN, NPN, and PNP junctions. Simplified description of the operation of diodes and transistors. Diode and transistor characteristic curves. The diode equation. Testing diodes and transistors.
2. Diode applications as rectifiers, zeners, limiters, clampers, switching, and logic. Light emitting diodes, variable capacitance diodes.
3. Bipolar junction transistors. Common base, common emitter, and common collector characteristics and biasing circuits. Bias design for BJT's. Bias stabilization using collector and emitter feedback, and voltage dividers. Transistor specifications. The transistor as a switch.
4. Bipolar junction transistor amplifiers. AC and DC amplifier gain, input and output impedance, and effect of source and load resistance. Brief treatment of h parameters.
5. Load line analysis of transistor amplifiers.
6. Field effect transistors (FET's). Junction FET characteristics and biasing. Fixed bias, self bias, and voltage divider bias. Graphical and algebraic bias solutions. Junction FET specifications.
7. Metal oxide semi-conductor FET's (MOS-FET's). Enhancement and depletion type MOS-FET characteristics and biasing. Fixed bias, self bias, voltage divider bias and feedback bias. Graphical and algebraic bias solutions. MOS- FET specifications.